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UID:20260728T131946EDT-0827h8Are6@132.216.98.100
DTSTAMP:20260728T171946Z
DESCRIPTION:Abstract\n\nIII-nitrides are well-known and highly promising se
 miconductor materials that have been widely used in electronic and optoele
 ctronic devices\, including light-emitting diodes\, laser diodes\, high-el
 ectron-mobility transistors\, and photodetectors. Beyond these established
  applications\, III-nitrides have also emerged as promising materials for 
 photoelectrochemical (PEC) devices\, which are attractive for solar-driven
  production of clean energy and chemicals. In addition\, PEC devices have 
 recently attracted interest as photodetectors operating in aqueous environ
 ments\, giving rise to a new class of devices known as PEC photodetectors 
 (PEC-PDs).\n\nThis thesis focuses on developing III-nitride materials for 
 PEC applications. First\, PEC-PDs have been investigated. Although signifi
 cant progress has been made in III-nitride dual-wavelength-distinguishable
  PEC-PDs\, most previously reported devices have been limited to the ultra
 violet (UV) range. However\, the highest transparency window in aqueous en
 vironments lies in the blue region\, making dual-wavelength detection in t
 he long-UV and blue ranges particularly important. Moreover\, while self-p
 owered PEC-PDs have previously been demonstrated\, they have been limited 
 to single-wavelength operation. Motivated by this\, we first demonstrate a
  dual-wavelength distinguishable PEC-PD capable of detecting both long-UV 
 and blue light. We have then identified the main barrier to self-powered o
 peration in dual-wavelength-distinguishable PEC-PDs: the built-in electric
  field at the interface of the p-n heterojunction. Through proper band eng
 ineering using a tunnel junction\, this limitation was overcome\, enabling
  the first self-powered dual-wavelength-distinguishable PEC-PD. High respo
 nsivities in the mA/W range and ultrafast response times of less than 10 m
 s are achieved under self-powered operation.\n\nThis thesis also demonstra
 tes\, for the first time\, the potential of emerging Sc-III-nitrides for P
 EC applications. Although Sc-III-nitrides are mainly known for their ferro
 electric properties\, Sc incorporation also shifts both the conduction and
  valence band edges upward while only slightly changing the bandgap. This 
 provides higher-energy electrons without sacrificing light absorption\, wh
 ich is advantageous for photocatalytic reduction reactions. Based on this\
 , ScGaN nanowires were grown by molecular beam epitaxy and demonstrated si
 gnificantly enhanced photocatalytic CO2 reduction performance compared wit
 h GaN. Finally\, to further expand PEC applications of Sc-III-nitrides\, p
 articularly for reduction reactions\, p-type doping of ScGaN nanowires was
  investigated. For the first time\, p-type doping was achieved in ScGaN na
 nowires and confirmed by multiple characterization techniques\, with dopin
 g concentrations in the range of 10^18–10^19 cm^-3.\n
DTSTART:20260630T140000Z
DTEND:20260630T160000Z
LOCATION:Room 603\, McConnell Engineering Building\, CA\, QC\, Montreal\, H
 3A 0E9\, 3480 rue University
SUMMARY:PhD defence of Milad Fathabadi – Emerging III-Nitrides Photoelectro
 chemical Devices by Molecular Beam Epitaxy for Photodetection and Photocat
 alysis
URL:/ece/channels/event/phd-defence-milad-fathabadi-em
 erging-iii-nitrides-photoelectrochemical-devices-molecular-beam-373410
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